Q —j Silicon-on-lnsulator MOS Devices for Integrated Circuit Applications, by Jean-Pierre
ثبت نشده
چکیده
منابع مشابه
Invited paper SOI Technology: An Opportunity for RF Designers?
This last decade silicon-on-insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency (reaching cutoff frequencies close to 500 GHz for n-MOSFETs) and for harsh environments (high temperature, radiation) commercial applications. For RF and system-onchip applications, SOI also presents the major advantage of providing high resistivity substrate capabilities, leadin...
متن کاملApplication of the EKV model to the DTMOS SOI transistor
−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-...
متن کاملHewlett-packard Journal Hewlett-packard Journal Contents: Intelligent Instrument Streamlines Dc Semiconductor Parameter Measurements Digital Section (grounded) Main Processing Unit Mass Storage Unit Front-panel Unit Graphics Display Measurement Section (floating) Digital Output (raw Data) Typical Applications of the 4145a Semiconductor Parameter Analyzer
Smaller NMOS devices operate faster and use less power. Some process innovations are required to make them. MOS Device and Process Design Using Computer Simulations, by Soo-Young Oh The effects of design changes can be accurately predicted by the proper computer model, elimi nating the need for actual fabrication. Semiconductor diodes and transistors are the building blocks of the electronic ma...
متن کاملEfficient silicon based light emitters
Recent progress on electrically driven silicon based light emitters is reviewed, with emphasis on our work on light emitting pn diodes (LED) and MOS devices doped with rare-earth elements. The LEDs were fabricated by high-dose boron implantation, producing nanoscale modifications in the material. The electroluminescence (EL) efficiency increases with temperature, reaching 0.1% (wall plug effici...
متن کاملNew Semiconductor Devices
A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1988